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Artykuły(11)

1 Application of Ion implantation for intermediate Energy levels formation in the silicon-based structures dedicated for photovoltaic purposes / Billewicz Piotr, Węgierek Paweł, Grudniewski Tomasz, Turek Marcin // ACTA PHYSICA POLONICA A - 2017, nr 2, vol. 132, s. 274-277 [MNiSW: 15]
2 Changes in the activation anergy of radiation defects in strongly defected silicon depending on the type and concentration of dopant / Węgierek Paweł, Billewicz Piotr // ACTA PHYSICA POLONICA A - 2014, nr 6, vol. 125, s. 1392-1395 [MNiSW: 15]
3 Charakterystyki czasowe skokowej wymiany ładunków w arsenku galu napromieniowanym jonami H+ / Węgierek Paweł, Billewicz Piotr // ELEKTRONIKA : KONSTRUKCJE, TECHNOLOGIE, ZASTOSOWANIA - 2011, nr 11, s. 67-69 [MNiSW: 6]
4 Influence of semi-conducting layers formation technology on electrical parameters of Si structures used in photovoltaics / Billewicz Piotr, Węgierek Paweł, Grudniewski Tomasz // PRZEGLAD ELEKTROTECHNICZNY - 2017, nr 8, vol. 93, s. 180-183 [MNiSW: 14]
5 Influence of temperature on electrical parameters of GaAs in the aspect of applications in photovoltaics / Węgierek Paweł, Billewicz Piotr // ACTA PHYSICA POLONICA A - 2015, nr 5, vol. 128, s. 875-878 [MNiSW: 15]
6 Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with H(+) Ions / Żukowski Paweł, Węgierek Paweł, Billewicz Piotr, Kołtunowicz Tomasz, Komarov F. F. // ACTA PHYSICA POLONICA A - 2011, nr 1, vol. 120, s. 125-128 [MNiSW: 15]
7 Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne(++) Neon Ions / Węgierek Paweł, Billewicz Piotr // ACTA PHYSICA POLONICA A - 2011, nr 1, vol. 120, s. 122-124 [MNiSW: 15]
8 Laboratory Stand for Examining the Influence of Environmental Conditions on Electrical Parameters of Photovoltaic Cells / Billewicz Piotr, Węgierek Paweł // PRZEGLAD ELEKTROTECHNICZNY - 2016, nr 8, vol. 92, s. 176-179 [MNiSW: 14]
9 Research on Jump Mechanism of Electric Charge Transfer Probability in Gallium Arsenide Irradiated with H+ lons / Węgierek Paweł, Billewicz Piotr // PRZEGLAD ELEKTROTECHNICZNY - 2012, nr 11b, s. 364-365 [MNiSW: 15]
10 Research on mechanisms of electric conduction in the p-type silicon implanted with Ne+ Ions / Węgierek Paweł, Billewicz Piotr // ACTA PHYSICA POLONICA A - 2013, nr 5, vol. 123, s. 948-951 [MNiSW: 15]
11 Research on thermal stability of electrical parameters of silicon used in PV cells production process / Węgierek Paweł, Billewicz Piotr // ACTA PHYSICA POLONICA A - 2015, nr 5, vol. 128, s. 943-945 [MNiSW: 15]

Referaty (8)

1 Analysis of the influence of thermal conditions on the electrical parameters of GaAs in the aspect of possible applications in photovoltaics / Węgierek Paweł, Billewicz Piotr // W: 10th International Conference ION Implantation and Other Applications of IONS and Elektrons - ION 2014, Kazimierz Dolny, Poland, June 23–26, 2014 : [book of abstracts] - 2014, s. 111-111
2 Changes in the activation energy of radiation defects strongly defected silicon depending on the type and concentration of dopant / Węgierek Paweł, Billewicz Piotr // W: 8th International Conference "New Electrical and Electronic Technologies and their Industrial Implementation"NEET 2013, Zakopane, Poland, June 18-21, 2013 : [książka streszczeń] - 2013, s. 165-165
3 The influence of temperature on the resistuvity of ion-implanted silicon with different types of doping / Węgierek Paweł, Billewicz Piotr // W: 8th International Conference "New Electrical and Electronic Technologies and their Industrial Implementation"NEET 2013, Zakopane, Poland, June 18-21, 2013 : [książka streszczeń] - 2013, s. 164-164
4 Performance analysis of energy generation capabilities in roof-mounted photovoltaic systems / Billewicz Piotr, Węgierek Paweł // W: 10th International Conference New Electrical and Electronic Technologies and Their Industrial Implementation (NEET 2017), 27-30 June 2017, Zakopane : [book of abstrcts] - 2017
5 Research on jump mechanism of electric charge transfer probability in gallium arsenide irradiated with H+ ions / Węgierek Paweł, Billewicz Piotr // W: 7th International Conference New Electrical and Electronic Technologies and their Industrial Implementation Zakopane, Poland, June 28 – July 1, 2011 - 2011, s. 189-189
6 Research on mechanism of electric conductivity in the p-type silicon implanted with Ne+ ions / Węgierek Paweł, Billewicz Piotr // W: IX International Conference on Ion Implantation and Other Applications of Ions and Electrons, 25-28 June, 2012, Kazimierz Dolny - 2012, s. 117-117
7 Research on thermal stability of electrical parameters of silicon used in the PV cells production process / Węgierek Paweł, Billewicz Piotr // W: 10th International Conference ION Implantation and Other Applications of IONS and Elektrons - ION 2014, Kazimierz Dolny, Poland, June 23–26, 2014 : [book of abstracts] - 2014, s. 112-112
8 The temperature-directed research into electrical properties of ion-implanted silicon with different type of doping / Węgierek Paweł, Billewicz Piotr // W: IX International Conference on Ion Implantation and Other Applications of Ions and Electrons, 25-28 June, 2012, Kazimierz Dolny - 2012, s. 118-118

Rozdzialy(1)

1 Best practices applicable as a means to ensure high quality of education at the EIE area / Wac-Włodarczyk Andrzej, Billewicz Piotr // W: Proceedings of the 24th Annual Conference on European Association for Education in Electrical and Information Engineering (EAEEIE); [Red:] Papadourakis G.M. - New York, USA: IEEE, 2013, s. 232-233 [MNiSW: 10]