Formularz do publikacji pracowników PL dostępny TUTAJ

Szczegóły publikacji


AC electric properties of nanocomposite (FeCoZr)0.818(CaF2)0.182 annealed in the tubular furnace

Autorzy: Vitalii Bondariev
Typ: Rozdział
Wersja dokumentu: Drukowana
Źródło: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VIII [WOS]
Redaktorzy: Marian Vladescu, Razvan Tamas, Ionica Cristea
Miejsce wydania: Bellingham ; USA
Wydawca: Spie-Int Soc Optical Engineering
Rok wydania: 2016
Seria: Proceedings of SPIE, ISSN 0277-786X; nr 10010
Abstrakt: EN
In this paper the influence of 15-minutes annealing in temperature range 398 K – 723 K with step 25 K on the frequency dependence on conductivity of nanocomposite (FeCoZr)x(CaF2)(100-x) was exanimate. Nanocomposite with metallic phase content x = 81.8 at.% was produced by ion-beam sputtering in mixed argon and oxygen atmosphere. Measurement were made in frequency range 50 Hz – 5 MHz and temperatures from 15 K to 375 K. It was found that to annealing temperature 523 K in measurement temperatures a less than room temperature a weak dependence of dielectric type of conductivity occurs in materials – the conductivity increases with temperature increase. At temperatures above room temperature a phase transition dielectric-metal is observed and a conductivity decreases with temperature increase. Growth stage of conductivity was observed in the frequency range above 105 Hz. The relaxation time for this stage is of the order 10-6 s. Annealing in the temperature above 523 K led to the appearance of additional low temperature stage of conductivity, for which the relaxation time is of the order of 10-4 s. The appearance of the low-frequency stage of conductivity increase is associated with oxidation of surface of nanoparticles of metallic phase during annealing, the growing barrier of potential and relaxation time. Further increase of annealing temperature above 673 K causes a further increase of the width of the barrier, and activation energy becomes so much that relaxation times for low-frequency stage grown above 10-2 s. Therefore, low-frequency stage is moves further into the area of low frequency and it becomes unnoticeable because it go beyond the lower range (50 Hz) of used meter. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Publikacja do: modułu sprawozdawczego PBN
Liczba arkuszy: 0,5
Open Access: NIE
Materiał konferencyjny: TAK
Nazwa konferencji: 8th International Conference on Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies (ATOM-N)
Data rozpoczęcia: 25 sierpnia 2016
Data zakończenia: 28 sierpnia 2016
Miasto konferencji: Constanta
Państwo konferencji: Rumunia
Bazy: Web of Science Core Collection, EBSCO, INSPEC, SPIE Digital Library