mgr inż. Piotr Billewicz
Inne materiały z 2012 (2)
1. Research on mechanism of electric conductivity in the p-type silicon implanted with Ne+ ions / Paweł Węgierek, Piotr Billewicz. [W]: IX International Conference on Ion Implantation and Other Applications of Ions and Electrons, 25-28 June, 2012, Kazimierz Dolny,
2. The temperature-directed research into electrical properties of ion-implanted silicon with different type of doping / Paweł Węgierek, Piotr Billewicz. [W]: IX International Conference on Ion Implantation and Other Applications of Ions and Electrons, 25-28 June, 2012, Kazimierz Dolny,
Inne materiały z 2011 (1)
1. Research on jump mechanism of electric charge transfer probability in gallium arsenide irradiated with H+ ions / Paweł Węgierek, Piotr Billewicz. [W]: 7th International Conference New Electrical and Electronic Technologies and their Industrial Implementation Zakopane, Poland, June 28 – July 1, 2011,
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