Influence of the liquid phase epitaxy conditions of growth on solar cells performance
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MNiSW
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| Status: | |
| Autorzy: | Cieślak Krystian, Olchowik Jan, Gułkowski Sławomir |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 475 - 478 |
| Web of Science® Times Cited: | 0 |
| Bazy: | Web of Science | |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | Conference on Environmental Engineering IV |
| Termin konferencji: | 3 września 2012 do 5 września 2012 |
| Miasto konferencji: | Lublin |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Liquid Phase Epitaxy (LPE) may be the only method of thin-film solar cell production that also enables the production of thin semiconductor layers on the growth substrate. This article presents results obtained by modification of the LPE method; thin Silicon (Si) layers were laterally grown on silicon substrates that were partially masked by dielectric SiO2. This approach enabled changes in the specificity of crystallization. Moreover, a dielectric layer, present under the Si film, forms an inner mirror to photons that have not been absorbed in the active layer. The influence of the dimensions of the dielectric mirror on the short circuit current density was examined. For more reliable analysis, thin-film Si solar cells based on the LPE method, but without an inner dielectric mirror, were made and their performance compared with solar cells produced on substrates with the dielectric cover. |
