Large area transparent in visible range silicon carbide photodiode
Fragment książki (Materiały konferencyjne)
MNiSW
10
WOS
| Status: | |
| Autorzy: | Borecki Michał, Kociubiński Andrzej, Duk Mariusz, Kwietniewski Norbert, Korwin-Pawlowski Michael L., Doroz Piotr, Szmidt Jan |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 122 - 130 |
| Web of Science® Times Cited: | 7 |
| Scopus® Cytowania: | 19 |
| Bazy: | Web of Science | Scopus | Web o Science Core Collection | Google Scholar |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | Conference on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments |
| Termin konferencji: | 27 maja 2013 do 2 czerwca 2013 |
| Miasto konferencji: | Wilga |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| This paper describes the construction, fabrication and properties of large-area ultra violet detector that is transparent in the visible range. The device was made on n-type 4H SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a SiO2 layer was formed for passivation, without a guard ring. The design of the top and bottom electrodes of 4mm diameter UV sensitive area allows not less than 20% visible range transmission. This transmission was measured across sensitive area of examined devices and was only 5% lower than that of the substrate before implantation and electrodes deposition. |
