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Silicon Carbide (SiC) photodiodes have been proposed in recent years for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200nm-400nm), excellent visible and infra-red blindness excluding UV filters implementation, low dark current and high speed. 4H-SiC has a bandgap three times larger (3.26eV) than Si and, thus, SiC detectors should have much higher sensitivity than Si detectors. In this paper, we present an overview of results on 4H-SiC p-i-n junctions fabrication and characterization. We used implantation technique to obtain p-region of the investigated structure. The ohmic contacts were formed using evaporation, etching and lift-off. Current-voltage, contact resistance and electroluminescence are the main characteristics of the presented devices. All the diodes showed excellent rectification with leakage current density of less than 10(-9)A/cm(2).
