Technology and characterization of 4H-SiC p-i-n junctions
Fragment książki (Materiały konferencyjne)
MNiSW
10
WOS
| Status: | |
| Autorzy: | Kociubiński Andrzej, Duk Mariusz, Masłyk Monika, Kwietniewski Norbert, Sochacki Mariusz, Borecki Michał, Korwin-Pawlowski Michael L. |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 236 - 241 |
| Web of Science® Times Cited: | 5 |
| Scopus® Cytowania: | 13 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | Conference on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments |
| Termin konferencji: | 27 maja 2013 do 2 czerwca 2013 |
| Miasto konferencji: | Wilga |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Silicon Carbide (SiC) photodiodes have been proposed in recent years for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200nm-400nm), excellent visible and infra-red blindness excluding UV filters implementation, low dark current and high speed. 4H-SiC has a bandgap three times larger (3.26eV) than Si and, thus, SiC detectors should have much higher sensitivity than Si detectors. In this paper, we present an overview of results on 4H-SiC p-i-n junctions fabrication and characterization. We used implantation technique to obtain p-region of the investigated structure. The ohmic contacts were formed using evaporation, etching and lift-off. Current-voltage, contact resistance and electroluminescence are the main characteristics of the presented devices. All the diodes showed excellent rectification with leakage current density of less than 10(-9)A/cm(2). |
