Fabrication and characterization of epitaxial 4H-SiC pn junctions
Fragment książki (Materiały konferencyjne)
MNiSW
10
WOS
| Status: | |
| Autorzy: | Kociubiński Andrzej, Duk Mariusz, Teklińska Dominika, Kwietniewski Norbert, Sochacki Mariusz, Borecki Michał |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 25 - 30 |
| Web of Science® Times Cited: | 2 |
| Scopus® Cytowania: | 4 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | 15th Conference on Optical Fibers and Their Applications |
| Termin konferencji: | 29 stycznia 2014 do 1 lutego 2014 |
| Miasto konferencji: | Białystok, Lipowy Most |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| This paper provides an overview of the process of 4H-SiC pn junction fabrication and characterization. The samples used in this study were fabricated in a resistively heated horizontal hot-wall Chemical Vapor Deposition reactor. The homo-epitaxial layers were grown on commercially available 4H-SiC substrates (Cree). In order to obtain p-type epilayers, they were intentionally doped with aluminum. In this work, we present our recently developed 4H-SiC pn junctions fabrication and characterization results. The ohmic contacts were formed using evaporation, etching, lift-off and high temperature annealing. Current-voltage characteristics of the devices were demonstrated. |
