Computer modeling of the mass transport influence on epilayer growth for photovoltaic applications
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| Status: | |
| Autorzy: | Gułkowski Sławomir, Olchowik Jan, Cieślak Krystian |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 457 - 461 |
| Web of Science® Times Cited: | 0 |
| Bazy: | Web of Science |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | Conference on Environmental Engineering IV |
| Termin konferencji: | 3 września 2012 do 5 września 2012 |
| Miasto konferencji: | Lublin |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| The advantage of the growth of Si layers from the Liquid Phase (LPE) is a possibility of using low temperature of the technological process. It leads to a lower concentration of the most unwanted impurities. With the use of ELO technique of silicon growth on substrate partially covered by dielectric mask, it is possible to obtain high quality Si epitaxial layers on silicon substrates with poor quality. For this reason and also due to using low-cost and simple apparatus, it seems to be a very promising method for photovoltaic applications. The main purpose in the method proposed in this paper is to determine technological parameters for which layers will be as wide and as thin as possible. It requires numerous technological experiments. Finite element analysis of the growth technique reduces number of experimental work and in consequence the cost of the optimizing process. Approach presented in this work is based on the assumption that growth is pure diffusion-controlled and mass transfer is the main process to reach thermodynamic equilibrium between the solid and liquid phase on the interface. On the basis of the diffusion of silicon in the solution the growth rate is calculated. Simulations have been carried out to obtain concentration profiles of the mass transport into grown interface of the layer for different conditions. To improve calculations near the border adaptive mesh method was used. |
