Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Fedotov Aleksander K., Korolik Olga V., Mazanik Aleksander V. , Kołtunowicz Tomasz, Żukowski Paweł
Rok wydania:	2011
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	1
Wolumen/Tom:	120
Strony:	108 - 110
Impact Factor:	0,444
Web of Science® Times Cited:	2
Scopus® Cytowania:	3
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	NIE
Materiał konferencyjny:	NIE
Publikacja OA:	NIE
Abstrakty:	polski
	The main goal of this work is to establish the influence of annealing on the properties of Cs-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350 degrees C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature.

Influence of Annealing on the Electrical Properties of Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment