Influence of Annealing on the Electrical Properties of Cz-Si Wafers Previously Subjected to the Hydrogen Ion-Beam Treatment
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Fedotov Aleksander K., Korolik Olga V., Mazanik Aleksander V. , Kołtunowicz Tomasz, Żukowski Paweł |
| Rok wydania: | 2011 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 1 |
| Wolumen/Tom: | 120 |
| Strony: | 108 - 110 |
| Impact Factor: | 0,444 |
| Web of Science® Times Cited: | 2 |
| Scopus® Cytowania: | 3 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | polski |
| The main goal of this work is to establish the influence of annealing on the properties of Cs-Si wafers previously subjected to the hydrogen ion-beam treatment at 25 or 300-350 degrees C. It is demonstrated by the conducted study that, despite similarity in the effects of the hydrogen ion-beam treatment at different temperatures on some electrical properties of the wafers (photovoltage spectra, thermoelectromotive force sign), thermal stability of changes in these properties due to the hydrogen ion-beam treatment depends on the hydrogenation temperature. |
