Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne(++) Neon Ions
Artykuł w czasopiśmie
MNiSW
15
Lista A
| Status: | |
| Autorzy: | Węgierek Paweł, Billewicz Piotr |
| Rok wydania: | 2011 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 1 |
| Wolumen/Tom: | 120 |
| Strony: | 122 - 124 |
| Impact Factor: | 0,444 |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | polski |
| The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of Ne(++) neon ions. An analysis of electrical properties recorded at the annealing temperature of T(a) = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies. |
