Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Węgierek Paweł, Billewicz Piotr
Rok wydania:	2011
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	1
Wolumen/Tom:	120
Strony:	122 - 124
Impact Factor:	0,444
Web of Science® Times Cited:	9
Bazy:	Web of Science
Efekt badań statutowych	NIE
Materiał konferencyjny:	NIE
Publikacja OA:	NIE
Abstrakty:	polski
	The article presents the results of research on alternating-current electrical conduction in phosphorus-doped silicon, strongly defected by the implantation of Ne(++) neon ions. An analysis of electrical properties recorded at the annealing temperature of T(a) = 373 K and affected by the changes of testing temperature ranging from 253 K to 368 K as well as frequency from 50 Hz to 5 MHz has been discussed. The obtained results have confirmed the occurrence of two conduction mechanisms in strongly defected semiconductors: the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies.

Jump Mechanism of Electric Conduction in n-Type Silicon Implanted with Ne(++) Neon Ions