Jump Mechanism of Electric Charge Transfer in Gallium Arsenide Exposed to Polyenergy Implantation with H(+) Ions
Artykuł w czasopiśmie
MNiSW
15
Lista A
| Status: | |
| Autorzy: | Żukowski Paweł, Węgierek Paweł, Billewicz Piotr, Kołtunowicz Tomasz, Komarov Fadei F. |
| Rok wydania: | 2011 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 1 |
| Wolumen/Tom: | 120 |
| Strony: | 125 - 128 |
| Web of Science® Times Cited: | 5 |
| Scopus® Cytowania: | 5 |
| Bazy: | Web of Science | Scopus | Web of Science Core Collection |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | polski |
| The article presents the experimental results on electric conductivity investigations of gallium arsenide, exposed to polyenergy implantations with H(+) ions, depending on alternating current frequency (50 Hz divided by 5 MHz), testing temperature (liquid nitrogen temperature divided by 373 K) and the temperature of 15 min isochronous annealing (293 divided by 663 K). It has been found that the obtained dependences sigma(T(p), f) result from a jump mechanism of electric charge transfer between the radiation defects that form in the process of ion implantation. Correlations between annealing of various types of radiation defects and conductivity characteristics sigma(T(p), f) have also been discussed. |
