Magnetoresistance in n-Si/SiO(2)/Ni Nanostructures Manufactured by Swift Heavy Ion-Induced Modification Technology
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Fedotova Julia A., Ivanou Dmitry, Ivanova Yulia, Fedotov Aleksander K., Mazanik Aleksander V. , Svito Ivan A., Streltsov Eugene, Saad Anis M., Tyutyunnikov Serguey, Kołtunowicz Tomasz, Demyanov S., Fedotova Vera V. |
| Rok wydania: | 2011 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 1 |
| Wolumen/Tom: | 120 |
| Strony: | 133 - 135 |
| Data nominalna: | 2011 |
| Impact Factor: | 0,444 |
| Web of Science® Times Cited: | 4 |
| Scopus® Cytowania: | 4 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | polski |
| Scientific-Practical Material Research Centre NAS of Belarus, 19 P. Brovka, 220072, Minsk, Belarus A study of magnetotransport in the n-Si/SiO(2)/Ni nanostructures with granular Ni nanorods in SiO(2) pores was performed over the temperature range 2-300 K and at the magnetic fields induction up to 8 T. The n-Si/SiO(2)/Ni Schottky nanostructures display the enhanced magnetoresistive effect at 25 K due to the impurity avalanche mechanism. |
