Structure and Electron-Transport Properties of Photoresist Implanted by Sb(+) Ions
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Vabishchevich Natalia, Brinkevich Dmitrij, Volobuev Vlas, Lukashevich Mikhail Grigoryevich, Prosolovich Vladislav Savel'evich, Sidorenko Julia V., Odzhaev Vladimir B., Partyka Janusz |
| Rok wydania: | 2011 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 1 |
| Wolumen/Tom: | 120 |
| Strony: | 46 - 48 |
| Impact Factor: | 0,444 |
| Web of Science® Times Cited: | 1 |
| Scopus® Cytowania: | 1 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 x 10(15) divided by 5 x 10(16) cm(-2) with the ion current density 4 mu A/cm(2) have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed. |
