Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Vabishchevich Natalia, Brinkevich Dmitrij, Volobuev Vlas, Lukashevich Mikhail Grigoryevich, Prosolovich Vladislav Savel'evich, Sidorenko Julia V., Odzhaev Vladimir B., Partyka Janusz
Rok wydania:	2011
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	1
Wolumen/Tom:	120
Strony:	46 - 48
Impact Factor:	0,444
Web of Science® Times Cited:	1
Scopus® Cytowania:	1
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	NIE
Materiał konferencyjny:	NIE
Publikacja OA:	NIE
Abstrakty:	angielski
	Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 x 10(15) divided by 5 x 10(16) cm(-2) with the ion current density 4 mu A/cm(2) have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.

Structure and Electron-Transport Properties of Photoresist Implanted by Sb(+) Ions