Optimization of metallic precursor thickness ratio for CIGS solar cell prepared by magnetron sputtering process
Fragment książki (Materiały konferencyjne)
| Status: | |
| Autorzy: | Gułkowski Sławomir, Krawczak Ewelina, Olchowik Jan |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0.25 |
| Język: | angielski |
| Strony: | 1330 - 1332 |
| Bazy: | INSPEC |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | 31st European Photovoltaic Solar Energy Conference and Exhibition |
| Termin konferencji: | 14 września 2015 do 18 września 2015 |
| Miasto konferencji: | Hamburg |
| Państwo konferencji: | NIEMCY |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Sputtering deposition is one of the cost effective method of producing CIGS solar cell. The process can be done in two steps. First one is the preparation of Cu-In-Ga precursor on SLG covered by 1μm Mo layer. In order to obtain optimized atomic ratio of CIGS absorber the CuGa/In/Cu layers with different thickness ratio were deposited by sequential sputtering of CuGa, In and CuSe targets. Different configuration of the layers deposition were tested. The surface morphology as well as EDS analysis were investigated to find sufficient thickness and good uniformity of the layers. The optimized thickness ratio of the metallic precursors was found. After this optimization the precursor layer was covered with selenium deposited from Se target in sputtering process. |
