Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Gułkowski Sławomir, Krawczak Ewelina, Olchowik Jan
Wersja dokumentu:	Drukowana \| Elektroniczna
Arkusze wydawnicze:	0.25
Język:	angielski
Strony:	1330 - 1332
Bazy:	INSPEC
Efekt badań statutowych	NIE
Materiał konferencyjny:	TAK
Nazwa konferencji:	31st European Photovoltaic Solar Energy Conference and Exhibition
Termin konferencji:	14 września 2015 do 18 września 2015
Miasto konferencji:	Hamburg
Państwo konferencji:	NIEMCY
Publikacja OA:	NIE
Abstrakty:	angielski
	Sputtering deposition is one of the cost effective method of producing CIGS solar cell. The process can be done in two steps. First one is the preparation of Cu-In-Ga precursor on SLG covered by 1μm Mo layer. In order to obtain optimized atomic ratio of CIGS absorber the CuGa/In/Cu layers with different thickness ratio were deposited by sequential sputtering of CuGa, In and CuSe targets. Different configuration of the layers deposition were tested. The surface morphology as well as EDS analysis were investigated to find sufficient thickness and good uniformity of the layers. The optimized thickness ratio of the metallic precursors was found. After this optimization the precursor layer was covered with selenium deposited from Se target in sputtering process.

Optimization of metallic precursor thickness ratio for CIGS solar cell prepared by magnetron sputtering process