The influence of annealing on the electrical and optical properties of silicon-rich silicon nitride films
Fragment książki (Materiały konferencyjne)
MNiSW
15
WOS
| Status: | |
| Autorzy: | Czarnacka Karolina, Komarov Fadei F. |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 80 - 87 |
| Web of Science® Times Cited: | 1 |
| Scopus® Cytowania: | 3 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | Conference on Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments |
| Skrócona nazwa konferencji: | SPIE-IEEE-PSP 2016 |
| URL serii konferencji: | LINK |
| Termin konferencji: | 29 maja 2016 do 6 czerwca 2016 |
| Miasto konferencji: | Wilga |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| In this paper measurements results of electrical and optical properties of SiNx thin layers are presented. Layers were produced by chemical vapor deposition on n-type (100)-oriented silicon substrates. Measurements were performed for samples directly after deposition and for samples annealed in temperature of 1073 K. Resistance Rp, capacity Cp, phase angle shift θ and dielectric loss factor tgδ were the measuring parameters on AC in the frequency range from 50 Hz to 5 MHz as a function of measurement temperature from the range 20 K – 373 K. Based on this, the conductivity σ and the activation energy of conductivity were determined. Photoluminescence spectra were recorded at room temperature in the spectral region of 350 – 800 nm using a He-Cd laser source with λ=325 nm. The influence of annealing on the electrical and optical properties was explained. Current resonance phenomenon and reduction of photoluminescence spectra were observed. |
