Modeling and fabrication of 4H-SiC Schottky junction
Fragment książki (Materiały konferencyjne)
MNiSW
15
WOS
Status: | |
Autorzy: | Martychowiec Agnieszka, Pedryc Aleksandra , Kociubiński Andrzej |
Dyscypliny: | |
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Wersja dokumentu: | Drukowana | Elektroniczna |
Arkusze wydawnicze: | 0,5 |
Język: | angielski |
Strony: | 1543 - 1549 |
Web of Science® Times Cited: | 0 |
Scopus® Cytowania: | 1 |
Bazy: | Web of Science | Scopus | Web of Science Core Collection |
Efekt badań statutowych | NIE |
Materiał konferencyjny: | TAK |
Nazwa konferencji: | XL-th IEEE-SPIE Joint Symposium on Photonics, Web Engineering, Electronics for Astronomy and High Energy Physics Experiments |
Skrócona nazwa konferencji: | XL SPIE-IEEE-PSP 2017 |
URL serii konferencji: | LINK |
Termin konferencji: | 28 maja 2017 do 6 czerwca 2017 |
Miasto konferencji: | Wilga |
Państwo konferencji: | POLSKA |
Publikacja OA: | NIE |
Abstrakty: | angielski |
The rapidly growing demand for electronic devices requires using of alternative semiconductor materials, which could replace conventional silicon. Silicon carbide has been proposed for these harsh environment applications (high temperature, high voltage, high power conditions) because of its wide bandgap, its high temperature operation ability, its excellent thermal and chemical stability, and its high breakdown electric field strength. The Schottky barrier diode (SBD) is known as one of the best refined SiC devices. This paper presents prepared model, simulations and description of technology of 4H-SiC Schottky junction as well as characterization of fabricated structures. The future aim of the application of the structures is an optical detection of an ultraviolet radiation. The model section contains a comparison of two different solutions of SBD’s construction. Simulations – as a crucial process of designing electronic devices – have been performed using the ATLAS device of Silvaco TCAD software. As a final result the paper shows I-V characteristics of fabricated diodes |