Modeling and simulation of 4H-SiC field effect transistor
Fragment książki (Materiały konferencyjne)
MNiSW
15
WOS
| Status: | |
| Autorzy: | Pedryc Aleksandra , Martychowiec Agnieszka, Kociubiński Andrzej |
| Dyscypliny: | |
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| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 1550 - 1557 |
| Web of Science® Times Cited: | 0 |
| Scopus® Cytowania: | 1 |
| Bazy: | Web of Science | Scopus | Web of Science Core Collection |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | XL-th IEEE-SPIE Joint Symposium on Photonics, Web Engineering, Electronics for Astronomy and High Energy Physics Experiments |
| Skrócona nazwa konferencji: | XL SPIE-IEEE-PSP 2017 |
| URL serii konferencji: | LINK |
| Termin konferencji: | 28 maja 2016 do 6 czerwca 2017 |
| Miasto konferencji: | Wilga |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| This paper presents the technological issue of silicon carbide MOSFET design. Through the use of simulations of silicon carbide transistor, the influence of the different the technological parameters are described and discussed. MOSFET transistor was performed in Silvaco TCAD using technology elaborated at Lublin University of Technology. The most important parameters related to ion implantation, which was used in p-i-n photodiode technology. The electrical simulations were performed, transfer and output characteristics for different values of technological parameters were generated – influence of gate oxide thickness on threshold voltage and influence of channel length modulation were checked. The results of simulations as well as transfer and output characteristics allowed to select optimal parameters between expected device working and available technology – gate oxide thickness and transistor channel length were established. This work was in fact carried out to increase our understanding of the device characteristics so as to allow the design of new SiC circuits which could meet the stressful requirements of ultraviolet detector systems |
