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This paper describes the technology and characterization of HgCdTe photodetectors developed in Vigo System S.A.. Four different variations of devices have been made which include different substrate types and different passivation coatings. CdTe passivation and anodization have been compared. Additionally, both passivations have been strengthened using a negative photoresist SU-8. As fabricated devices have been destined to work as infrared radiation detectors, there has been performed a current measurement for reverse polarization. Based on current-voltage characteristics, current densities have been calculated and compared among fabricated photodiodes to find the best solution of examined passivations.
