Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Kociubiński Andrzej, Duk Mariusz, Bieniek Tomasz, Janczyk Grzegorz, Borecki Michał
Rok wydania:	2014
URL do źródła	LINK
Język:	angielski
Źródło:	3D Systems Integration Conference (3DIC), 2014 International
Państwo wystąpienia:	POLSKA
Efekt badań statutowych	NIE
Abstrakty:	angielski
	This paper describes the fabrication of 3D-stacked, dual-band sensitive device and their preliminary characterization results. The device consists of two 3D integrated detectors. The square chip with fabricated 4H-SiC p-i-n junction was mounted on commercial silicon chip with large area VIS-photodiode made by Institute of Electron Technology in Warsaw. The UV-photodetector was made on n-type 4H-SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a silicon dioxide layer was formed for passivation, without a guard ring. The optical and electrical characterization of each of the photodiode structures has been discussed including dark current and spectral response measurements of large-area silicon diode with 4H-SiC p-i-n junction. All the diodes showed excellent rectification with low leakage current.

Innovative SiC over Si photodiode based dual - band, 3D Integrated detector