Porous silicon with embedded metal oxides for gas sensing applications
Artykuł w czasopiśmie
MNiSW
35
Lista A
| Status: | |
| Autorzy: | Moshnikov Vyatcheslav A., Grachewa Irina, Lenshin Aleksandr S., Spivak Yulia M., Anchkov Maxim G., Kuznestov Vladimir V., Olchowik Jan |
| Rok wydania: | 2012 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 3 |
| Wolumen/Tom: | 358 |
| Strony: | 590 - 595 |
| Impact Factor: | 1,597 |
| Web of Science® Times Cited: | 58 |
| Scopus® Cytowania: | 81 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| This paper presents an analysis of the sol deposition process on porous silicon in order to produce highly sensitive gas detectors. Sol solutionswere depositedwithin the dendrite structural pore regions of n-type silicon. The parameters for the structures, built of metal oxides (Fe, Ni, Sn), were analyzed. A morphological study of porous silicon, with embedded metal oxide nanocomposites, was carried out using atomic force microscopy. Cross-sections of porous silicon were examined using a scanning electronmicroscopy. Impedance spectroscopy was used to study the electrical properties of nanomaterials, based on porous silicon,withembeddedmetal oxide nanocomposites. Gas-sensitivity measurements of the synthesized samplesweremade. It turned out that, applying variable frequency interference to the sensory structures in a changing environment, changes the impedance response of gas. New perspectives for increasing sensitivity and selectivity are shown. |
