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This paper presents an analysis of the sol deposition process on porous silicon in order to produce highly sensitive gas detectors. Sol solutionswere depositedwithin the dendrite structural pore regions of n-type silicon. The parameters for the structures, built of metal oxides (Fe, Ni, Sn), were analyzed. A morphological study of porous silicon, with embedded metal oxide nanocomposites, was carried out using atomic force microscopy. Cross-sections of porous silicon were examined using a scanning electronmicroscopy. Impedance spectroscopy was used to study the electrical properties of nanomaterials, based on porous silicon,withembeddedmetal oxide nanocomposites. Gas-sensitivity measurements of the synthesized samplesweremade. It turned out that, applying variable frequency interference to the sensory structures in a changing environment, changes the impedance response of gas. New perspectives for increasing sensitivity and selectivity are shown.
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