Influence of rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by pyrogenous oxidation
Artykuł w czasopiśmie
MNiSW
20
Lista 2021
| Status: | |
| Autorzy: | Pilipenko Vladimir A., Solodukha Vitali A., Zharin Anatoly L., Gusev Oleg K., Vorobey Roman I., Pantsialeyeu Kanstantsin, Tyavlovsky Andrey K., Tyavlovsky Konstantin L., Bondariev Vitalii |
| Dyscypliny: | |
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| Rok wydania: | 2019 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 3 |
| Wolumen/Tom: | 23 |
| Strony: | 283 - 290 |
| Web of Science® Times Cited: | 1 |
| Scopus® Cytowania: | 1 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | TAK |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| For investigation of the influence exerted by rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by means of the pyrogenous oxidation the analysis methods of volt-farad characteristics and the scanning probe electrometry were used. The obtained results demonstrate reduction of both stress of the flat zones and the charge density on the silicon-silicon dioxide boundary on the wafers, which were subjected to rapid thermal treatment. The alterations of the surface potential on the wafer area registered by means of the method of scanning probe electrometry correspond to the diminishing operation of the electrons, leaving the surface and serve as justification of the assertion that the properties of the silicon-silicon dioxide boundary improve after rapid thermal treatment of initial silicon wafers owing to the substantial enhancement of the homogeneity of microstructure of the surface layer of silicon dioxide. |
