Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Pilipenko Vladimir A., Solodukha Vitali A., Zharin Anatoly L., Gusev Oleg K., Vorobey Roman I., Pantsialeyeu Kanstantsin, Tyavlovsky Andrey K., Tyavlovsky Konstantin L., Bondariev Vitalii
Dyscypliny:
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Rok wydania:	2019
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	3
Wolumen/Tom:	23
Strony:	283 - 290
Web of Science® Times Cited:	1
Scopus® Cytowania:	1
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	TAK
Materiał konferencyjny:	NIE
Publikacja OA:	NIE
Abstrakty:	angielski
	For investigation of the influence exerted by rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by means of the pyrogenous oxidation the analysis methods of volt-farad characteristics and the scanning probe electrometry were used. The obtained results demonstrate reduction of both stress of the flat zones and the charge density on the silicon-silicon dioxide boundary on the wafers, which were subjected to rapid thermal treatment. The alterations of the surface potential on the wafer area registered by means of the method of scanning probe electrometry correspond to the diminishing operation of the electrons, leaving the surface and serve as justification of the assertion that the properties of the silicon-silicon dioxide boundary improve after rapid thermal treatment of initial silicon wafers owing to the substantial enhancement of the homogeneity of microstructure of the surface layer of silicon dioxide.

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Influence of rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by pyrogenous oxidation

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