Application of poly-energy implantation with H+ionsfor additional energy levels formation in GaAs dedicated to photovoltaic cells
Artykuł w czasopiśmie
MNiSW
100
Lista 2021
| Status: | |
| Autorzy: | Węgierek Paweł, Pietraszek Justyna |
| Dyscypliny: | |
| Aby zobaczyć szczegóły należy się zalogować. | |
| Rok wydania: | 2019 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 4 |
| Wolumen/Tom: | 68 |
| Strony: | 925 - 931 |
| Web of Science® Times Cited: | 4 |
| Scopus® Cytowania: | 4 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | TAK |
| Licencja: | |
| Sposób udostępnienia: | Witryna wydawcy |
| Wersja tekstu: | Ostateczna wersja opublikowana |
| Czas opublikowania: | W momencie opublikowania |
| Data opublikowania w OA: | 2 grudnia 2019 |
| Abstrakty: | angielski |
| The aim of this article is to present the results of research aimed at confirmationwhether it is possible to form an intermediate band in GaAs implantation with H+ions.The obtained results were discussed with particular emphasis on possible applications inthe photovoltaic industry. As it is commonly known, the idea of intermediate band solarcells reveals considerable potential as the most fundamental principle of the next generationof semiconductors solar cells. In progress of the research, a series of GaAs samples weresubjected to poly-energy implantation of H+ions, followed by high-temperature annealing.Tests were conducted using thermal admittance spectroscopy, under conditions of variableambient temperature, measuring signal frequency in order to localize deep energy levels,introduced by ion implantation. Activation energy∆Ewas determined for additional energylevels resulting from the implantation of H+ions. The method of determining the activationenergy value is shown in Fig. 2 and the values read from it are 0=10 |
