Formation of nanotubes in Cz Si wafers using He+ implantation and subsequent O+- or N+-plasma treatmen
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Frantskevich A. V., Saad Anis M., Frantskevich N. V., Fedotov Aleksander K., Mazanik Aleksander V. , Tarasik Maria I., Yanchenko A.M., Węgierek Paweł, Żukowski Paweł |
| Rok wydania: | 2009 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | suppl. 1 |
| Wolumen/Tom: | 83 |
| Strony: | S103 - S106 |
| Impact Factor: | 0,975 |
| Web of Science® Times Cited: | 0 |
| Scopus® Cytowania: | 0 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Standard 4.5 Ω cm n-type and 12 Ω cm p-type Cz Si wafers were implanted with helium ions of 300 keV energy and the fluences of 1 × 1015, 5 × 1015, 1 × 1016 or 2 × 1016 at/cm2 at room temperature. The implanted wafers were then annealed in vacuum at 650, 700, 750 or 800 °C. Then oxygen or nitrogen ions of the fluence of 2 × 1017 cm−2 were introduced to the silicon wafers from a plasma source followed by annealing the samples in vacuum at 900 °C. The structural properties of the samples were investigated using SEM. To control the treatment's influence on the electrical properties of the wafers, the measurements of charge carriers' lifetime were carried out. 1D defects (nanotubes) normal to the sample surface with defect's length equal to the projected range of the implanted ions were formed in the Cz Si wafers following He+ implantation with subsequent vacuum annealing and plasma treatment. The surfaces of wafers contained a small density of defects. |
