Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Olchowik Jan, Gułkowski Sławomir, Cieślak Krystian, Zabielski Krzysztof, Jóźwik Iwona, Rudawska Anna
Rok wydania:	2008
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	35-39
Wolumen/Tom:	354
Strony:	4423 - 4425
Impact Factor:	1,449
Web of Science® Times Cited:	2
Scopus® Cytowania:	2
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	NIE
Materiał konferencyjny:	NIE
Publikacja OA:	NIE
Abstrakty:	angielski
	Epitaxial growth of thin layers from the liquid phase can occur with the use of solutions saturated under different ambient gases. Most often this process takes place in a vacuum or gaseous atmosphere of hydrogen or argon. As the experimental data show, the morphology of crystallized layers is determined by the ambient type in which the process occurs. The cohesion energy responsible for epitaxial lateral deposition processes on the substrate surface depends on the surface free energy which is a measure of attraction of the solution atoms by substrate atoms. In the case of crystallization of an epitaxial lateral layer of Si on a substrate partially masked with dielectric, the chemical potentials of atoms in the neighboring phases (determining the interface evolution) are not without influence on the relaxation velocity of the saturated liquid phase, and on the horizontal and vertical growth rate. The aim of the investigation was to analyze experimentally the influence of the ambient gases used during the LPE growth on the cohesion of the Sn–Si solution with substrates applied for the lateral epitaxial growth of Si layers. This work presents comparative temperature analysis of the wetting angle of such surfaces as Si, SiO2 and SiNx by the Sn–Si solution.

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Analysis of ambient gas influence on silicon layers crystallized by means of LPE

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