Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Saad Anis M., Frantskevich A. V., Fedotov Aleksander K., Mazanik Aleksander V. , Rau Eduard I., Frantskevich N. V., Węgierek Paweł, Kołtunowicz Tomasz, Żukowski Paweł
Rok wydania:	2009
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	suppl. 1
Wolumen/Tom:	83
Strony:	S107 - S110
Impact Factor:	0,975
Web of Science® Times Cited:	0
Scopus® Cytowania:	1
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	NIE
Materiał konferencyjny:	NIE
Publikacja OA:	NIE
Abstrakty:	angielski
	Standard 20 Omega cm boron doped Cz Si wafers were subjected to 100 keV hydrogen ion implantation at room temperature to fluences of 1 x 10(16) or 4 x 10(16) at/cm(2). Subsequently, nitrogen was incorporated in silicon from a DC plasma source at a temperature of 300 degrees C. Finally. all samples were annealed at 700 degrees C for 2 h in vacuum. Structural properties of samples were studied by SIMS and SEM. The SEM study was carried out both in the secondary electrons (SE) and the Surface-Electron-Beam-Induced-Voltage (SEBIV) modes. The experiments have demonstrated that incorporated from plasma nitrogen atoms were accumulated in the buried damage layer and the formed nitrogen-containing layer has an island-like structure. (C) 2009 Elsevier Ltd. All rights reserved.

SEM and SIMS study of the buried SixNy layer formed in silicon