SEM and SIMS study of the buried SixNy layer formed in silicon
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Saad Anis M., Frantskevich A. V., Fedotov Aleksander K., Mazanik Aleksander V. , Rau Eduard I., Frantskevich N. V., Węgierek Paweł, Kołtunowicz Tomasz, Żukowski Paweł |
| Rok wydania: | 2009 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | suppl. 1 |
| Wolumen/Tom: | 83 |
| Strony: | S107 - S110 |
| Impact Factor: | 0,975 |
| Web of Science® Times Cited: | 0 |
| Scopus® Cytowania: | 1 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Standard 20 Omega cm boron doped Cz Si wafers were subjected to 100 keV hydrogen ion implantation at room temperature to fluences of 1 x 10(16) or 4 x 10(16) at/cm(2). Subsequently, nitrogen was incorporated in silicon from a DC plasma source at a temperature of 300 degrees C. Finally. all samples were annealed at 700 degrees C for 2 h in vacuum. Structural properties of samples were studied by SIMS and SEM. The SEM study was carried out both in the secondary electrons (SE) and the Surface-Electron-Beam-Induced-Voltage (SEBIV) modes. The experiments have demonstrated that incorporated from plasma nitrogen atoms were accumulated in the buried damage layer and the formed nitrogen-containing layer has an island-like structure. (C) 2009 Elsevier Ltd. All rights reserved. |
