Photoresponse of hydrogen plasma treated and electron irradiated silicon wafers
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Zinchuk Olga , Drozdov N. A., Mazanik Aleksander V. , Fedotov Aleksander K., Żukowski Paweł, Partyka Janusz, Węgierek Paweł, Kołtunowicz Tomasz |
| Rok wydania: | 2007 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 10 |
| Wolumen/Tom: | 81 |
| Strony: | 1332 - 1336 |
| Impact Factor: | 0,881 |
| Web of Science® Times Cited: | 2 |
| Scopus® Cytowania: | 2 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Photovoltage (PV) spectra of standard commercial Czochralski n- and p-type silicon wafers with different resistivity subjected to hydrogenation and/or 3.5 MeV electron irradiation have been studied. The PV signal was generated using a band bending present in the wafers. For more information about the influence of hydrogenation and/or electron irradiation on the wafer properties, the measurements of thermo-EMF and surface resistance have been made. The experiments have shown that the hydrogenation of the p-type wafers leads to the appearance of PV signal similar to that for silicon photodiodes as a result of the n-type layer creation near the hydrogenated surface. A drawing field created in the p-type wafers in consequence of their hydrogenation decreases the effect of the carrier diffusion length reduction due to electron irradiation that makes the hydrogenated p-type wafers less sensitive to the radiation impact. |
