Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Zinchuk Olga , Drozdov N. A., Mazanik Aleksander V. , Fedotov Aleksander K., Żukowski Paweł, Partyka Janusz, Węgierek Paweł, Kołtunowicz Tomasz
Rok wydania:	2007
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	10
Wolumen/Tom:	81
Strony:	1332 - 1336
Impact Factor:	0,881
Web of Science® Times Cited:	2
Scopus® Cytowania:	2
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	NIE
Materiał konferencyjny:	NIE
Publikacja OA:	NIE
Abstrakty:	angielski
	Photovoltage (PV) spectra of standard commercial Czochralski n- and p-type silicon wafers with different resistivity subjected to hydrogenation and/or 3.5 MeV electron irradiation have been studied. The PV signal was generated using a band bending present in the wafers. For more information about the influence of hydrogenation and/or electron irradiation on the wafer properties, the measurements of thermo-EMF and surface resistance have been made. The experiments have shown that the hydrogenation of the p-type wafers leads to the appearance of PV signal similar to that for silicon photodiodes as a result of the n-type layer creation near the hydrogenated surface. A drawing field created in the p-type wafers in consequence of their hydrogenation decreases the effect of the carrier diffusion length reduction due to electron irradiation that makes the hydrogenated p-type wafers less sensitive to the radiation impact.

Photoresponse of hydrogen plasma treated and electron irradiated silicon wafers