Innovative SiC over Si photodiode based dual-band, 3D integrated detector
Fragment książki (Materiały konferencyjne)
| Status: | |
| Autorzy: | Kociubiński Andrzej, Duk Mariusz, Bieniek Tomasz, Janczyk Grzegorz, Borecki Michał |
| Wersja dokumentu: | Elektroniczna |
| Język: | angielski |
| Strony: | 209 - 213 |
| Scopus® Cytowania: | 2 |
| Bazy: | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | 2014 International 3D Systems Integration Conference (3DIC) |
| Skrócona nazwa konferencji: | 3DIC 2014 |
| Termin konferencji: | 1 grudnia 2014 do 3 grudnia 2014 |
| Miasto konferencji: | Kinsdale |
| Państwo konferencji: | IRLANDIA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| This paper describes the fabrication of 3D-stacked, dual-band sensitive device and their preliminary characterization results. The device consists of two 3D integrated detectors. The square chip with fabricated 4H-SiC p-i-n junction was mounted on commercial silicon chip with large area VIS-photodiode made by Institute of Electron Technology in Warsaw. The UV-photodetector was made on n-type 4H-SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a silicon dioxide layer was formed for passivation, without a guard ring. The optical and electrical characterization of each of the photodiode structures has been discussed including dark current and spectral response measurements of large-area silicon diode with 4H-SiC p-i-n junction. All the diodes showed excellent rectification with low leakage current. |
