Properties and phase transition of (Ti,Al)N thin films prepared by ion beam-assisted deposition
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Budzyński Piotr, Sielanko Juliusz, Surowiec Zbigniew |
| Rok wydania: | 2008 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 8 |
| Wolumen/Tom: | 16 |
| Strony: | 987 - 994 |
| Impact Factor: | 2,034 |
| Web of Science® Times Cited: | 8 |
| Scopus® Cytowania: | 14 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| (Ti,Al)N layers thinner than 0.35 mu m were deposited on the Ti or Al substrates with the aluminium or titanium ion beam-assisted deposition (IBAD) method. Directly after the implantation, phase mixing was observed on the top sample layer. Mainly a layer of c-Ti1-xAlxN was formed on the surface of both samples. Underneath, there was a c-TiN layer on the titanium substrate and a c-AlN layer on the aluminium substrate. After annealing at 450 degrees C for 48 h, the internal layer in the sample deposited on the Ti substrate decomposed, forming a structure containing a mixture of the c-TiN and c-AlN phases. Annealing the sample made on the Al substrate caused a transformation of the external layer into Ti2AlN. Aluminium deposition on the aluminium substrate and nitrogen implantation led to the formation of the c-AlN phase. The process of sample annealing caused a partial transformation of the cubic phase (c-AlN) into a thermodynamically stable hexagonal h-AlN phase. The top layer of all tested samples had a columnar structure. Annealing led to a change in the column density and height. |
