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Liquid phase epitaxy (LPE) and, in particular, epitaxial lateral overgrowth (ELO) is an attractive
method of thin film deposition, owing to the simplicity of its technology and a reduced growth temperature. In this paper, we present recent results of the ELO of silicon layers carried out by means of LPE
using Ar as an ambient gas, without any addition of hydrogen, potentially explosive gas, which makes
this deposition technique a very safe process. The aim of the this work focused on the silicon ELO growth
on partially masked substrates was to determine optimal conditions of growth resulting in ELO layers of
the maximum aspect ratio and minimum defect density. Data presented herein clearly show that the epitaxial layers characterized by the maximum value of the aspect ratio can be obtained by application of the
0.25 °C/min cooling rate. Noteworthy is the fact that in the same conditions the defect density achieves
the minimum value of 1.07×104
cm–2, which is the amount smaller by the factor of 10 than the defect
density of Si substrates used (1.7×105
cm–2). It confirms the ELO technique as a promising tool for the
fabrication of low-defect density silicon layers of good morpholog
