Finite element method simulation of interface evolution during epitaxial growth
Artykuł w czasopiśmie
| Status: | |
| Autorzy: | Gułkowski Sławomir, Olchowik Jan, Cieślak Krystian, Moskvin Pavel P. |
| Rok wydania: | 2012 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 4 |
| Wolumen/Tom: | 30 |
| Strony: | 414 - 418 |
| Impact Factor: | 0,258 |
| Web of Science® Times Cited: | 2 |
| Scopus® Cytowania: | 2 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Epitaxial Lateral Overgrowth (ELO) is a method of epitaxial growth on a partially masked substrate. It can be a promising method for photovoltaic applications due to a possibility of producing thin and high quality silicon substrates. Since the mask prevents propagation of the substrate dislocations to the laterally overgrown parts of the ELO layer they are characterized by a lower dislocation density than the substrate. It means that it is possible to fabricate good quality solar cells on a poor quality Si substrate. The main goal of the research is to obtain a higher growth rate in the lateral direction than in the direction normal to the substrate. The epilayer growth kinetics depends on many technological factors, basically the growth temperature, the cooling rate, the solvent and the mask filling factor. For this reason the best way to achieve the goal is a computational analysis of the epitaxial layer growth process. This work presents a two-dimensional computational study of such a process of growth for different technological conditions. The computational model is based on the assumption of pure diffusion control growth. |
