Carrier transport and dielectric permittivity of SiO2 films containing ion-beam synthesized InSb nanocrystals
Artykuł w czasopiśmie
MNiSW
100
Lista 2021
| Status: | |
| Autorzy: | Żukowski Paweł, Kołtunowicz Tomasz, Czarnacka Karolina, Fedotov Aleksander K., Tyschenko Ida E. |
| Dyscypliny: | |
| Aby zobaczyć szczegóły należy się zalogować. | |
| Rok wydania: | 2020 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Wolumen/Tom: | 846 |
| Numer artykułu: | 156482 |
| Strony: | 1 - 8 |
| Impact Factor: | 5,316 |
| Web of Science® Times Cited: | 11 |
| Scopus® Cytowania: | 11 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| The structural and electrical properties of the SiO2 layers containing ion-beam synthesized spherical InSb nanoparticles were studied. The I–V characteristics, low-frequency conductivity as well as capacity, phase shift angle and loss tangent at the frequencies from 50 Hz to 5 × 106 Hz were measured at the temperatures varied from 30 K to 375 K. The capacity and phase shift angle behaviour confirms the capacitive character of the examined structures. The AC conductivity curves show the transition from the carrier transport mechanism provided by Mott electron hopping to the zone-like transport at the increase of temperature above 200 K. Both real and imaginary parts of the dielectric permittivity have the exponential dependence on the frequency within the whole studied temperature range. The origin of the obtained effect is discussed in the frame of the SiO2 polarization at the InSb/SiO2 interface. |
