RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication
Artykuł w czasopiśmie
MNiSW
100
Lista 2021
| Status: | |
| Autorzy: | Gułkowski Sławomir, Krawczak Ewelina |
| Dyscypliny: | |
| Aby zobaczyć szczegóły należy się zalogować. | |
| Rok wydania: | 2020 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 8 |
| Wolumen/Tom: | 10 |
| Numer artykułu: | 791 |
| Strony: | 1 - 14 |
| Web of Science® Times Cited: | 10 |
| Scopus® Cytowania: | 11 |
| Bazy: | Web of Science | Scopus | Chemical Abstracts(ACS) | Extemal Link Curren tContents | Computing& Technology(ClarivateAnalytics) | DOAJ | Inspec(IET) |
| Efekt badań statutowych | NIE |
| Finansowanie: | This work was supported by Polish Ministry of Science and Higher Education. |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | TAK |
| Licencja: | |
| Sposób udostępnienia: | Witryna wydawcy |
| Wersja tekstu: | Ostateczna wersja opublikowana |
| Czas opublikowania: | W momencie opublikowania |
| Data opublikowania w OA: | 14 sierpnia 2020 |
| Abstrakty: | angielski |
| Thin film Cu(In,Ga)Se2 (CIGS)-based solar cells with relatively high efficiency and low material usage might become a promising alternative for crystalline silicon technology. The most challenging task nowadays is to decrease the PV module fabrication costs by application of easily scalable industrial process. One of the possible solutions is the usage of magnetron sputtering system for deposition of all structures applied in CIGS-based photovoltaic device. The main object of these studies was fabrication and characterization of thin films deposited by sputtering technique. Structural and electrical properties of the sputtered films were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray Powder Diffraction (XRD), and four-point probe resistivity measurements. The presented findings revealed technological parameters for which sheet resistance of molybdenum (Mo) back contact decreased up to 0.3 Ω/□ and to even 0.08 Ω/□ in case of aluminum layer. EDS analysis provided evidence for the appropriate stoichiometry of CIGS absorber (with CGI and GGI equal to 0.96 and 0.2, respectively). XRD characterization confirmed high-quality chalcopyrite polycrystalline structure of Cu(In,Ga)Se2 film fabricated at relatively low substrate temperature of 400 °C. Characteristic XRD peaks of hexagonal-oriented structures of sputtered CdS and i-ZnO layers were noticed. |
