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Currently, special attention is paid to the search for new ceramic materials based on wide-gap oxides, aswell as to the study of their structure and properties with a view to their application in various areas ofelectronic and optoelectronic industry.Conventional double-step ceramic technology has been used to obtain samples in this experiment.After compacting at the pressure of 6 GPa of ZnO and ZnO-FexOypowders in different weight relations,the samples were subjected to the procedure of synthesis at 1173 K for 2 h and then to the annealing at1473 K for 3 h on air.The samples structure was investigated by the Scanning Electron Microscopy (SEM), Energy-dispersiveX-ray Spectroscopy (EDX), X-ray Diffraction (XRD) and Raman spectroscopy methods. Temperature de-pendences of resistivity, magnetoresistance, Hall and Seebeck effects were experimentally studied in therange from 4 to 700 K.As the experiments have shown, the size of grains in the obtained ceramic samples after synthesis wasin submicron range. An XRD study showed the saving of the wurtzite structure in Zn1-dFedO solid so-lutions where 0.66<d<0.81 at. % regardless of the type of the doping agent. At the same time, thereplacement of zinc by iron atoms led to the contraction of the ZnO lattice.All the samples studied (ZnO and Zn1-dFedO) demonstrate n-type conductivity. The temperature de-pendencies of resistivity have shown two specific features: the presence of energy level about 0.35 eVbelow the conduction band bottom for the doped ceramic samples (unknown in literature) andconductance with the changing activation energy at temperatures below 200 K for the undoped ZnOceramic samples. Seebeck coefficient increased by100e150% with doping due to growth of electronconcentration. Some model concepts about scattering mechanisms and reasons of Seebeck effectenhancement have been developed.