Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Węgierek Paweł, Pastuszak Justyna, Dziadosz Kamil, Turek Marcin
Dyscypliny:
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Rok wydania:	2020
Wersja dokumentu:	Elektroniczna
Język:	angielski
Numer czasopisma:	24
Wolumen/Tom:	13
Numer artykułu:	6708
Strony:	1 - 17
Impact Factor:	3,004
Web of Science® Times Cited:	6
Scopus® Cytowania:	6
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	NIE
Finansowanie:	This work was supported by The National Centre for Research and Development and co-financed from the European Union funds under the Smart Growth Operational Programme (grant # POIR.04.01.04-00-0130/16).
Materiał konferencyjny:	NIE
Publikacja OA:	TAK
Licencja:
Sposób udostępnienia:	Witryna wydawcy
Wersja tekstu:	Ostateczna wersja opublikowana
Czas opublikowania:	W momencie opublikowania
Data opublikowania w OA:	19 grudnia 2020
Abstrakty:	angielski
	The main goal of this work was to conduct a comparative analysis of the electrical properties of the silicon implanted with neon ions, depending on the dose of ions and the type of substrate doping, for the possibility of generating additional energy levels by ion implantation in terms of improving the efficiency of photovoltaic cells made on its basis. The article presents the results of research on the capacitance and conductance of silicon samples doped with boron and phosphorus, the structure of which was modified in the implantation process with Ne+ ions with energy E = 100 keV and different doses. The analysis of changes in electrical properties recorded at the annealing temperature of the samples Ta = 298 K, 473 K, 598 K, 673 K, and 873 K, concerned the influence of the test temperature in the range from 203 K to 373 K, as well as the frequency f from 100 Hz to 10 MHz, and voltage U from 0.25 V to 2 V. It was possible to detect intermediate bands in the tested samples and determine their position in the band gap by estimating the activation energy value. By means of implantation, it is possible to modify the width of the silicon energy gap, the value of which directly affects the efficiency of the photovoltaic cell made on its basis. By introducing appropriate defects into the silicon crystal lattice, contributing to a change in the value of the energy gap Eg, it is possible to increase the efficiency of the solar cell. On the basis of the obtained results, it can be seen that the highest activation energies are achieved for samples doped with phosphorus.

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Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells

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