Baza Publikacji Pracowników Politechniki Lubelskiej

Status:
Autorzy:	Chocyk Dariusz, Zientarski Tomasz, Prószyński Adam, Pieńkos Tomasz, Gładyszewski Longin, Gładyszewski Grzegorz
Rok wydania:	2005
Wersja dokumentu:	Drukowana \| Elektroniczna
Język:	angielski
Numer czasopisma:	4-5
Wolumen/Tom:	40
Strony:	509 - 516
Impact Factor:	0,833
Web of Science® Times Cited:	22
Scopus® Cytowania:	21
Bazy:	Web of Science \| Scopus
Efekt badań statutowych	NIE
Materiał konferencyjny:	NIE
Publikacja OA:	TAK
Licencja:
Sposób udostępnienia:	Witryna wydawcy
Wersja tekstu:	Ostateczna wersja opublikowana
Czas opublikowania:	W momencie opublikowania
Abstrakty:	angielski
	Evolution of stresses developing in Cu thin films during and after deposition by thermal evaporation in UHV system is studied. Thin films were deposited on 100 µm thick Si substrate at room temperature. Deposition rates for the films were changed between 0.2 Å/s and 2.0 Å/s, while the total thickness was changed from 7.7 nm to 155 nm. Deformation analysis of crystalline lattice and microstructure was performed by x‐ray diffraction measurements (θ‐2θ scans, “sin2ψ” method). The surface morphology of film was studied by atomic force microscopy. The average stress in the films was determined by measuring the radius of curvature of samples. For thin films three stages of stress evolution (compressive, tensile and compressive) were we distinguished. This behavior is characteristic for materials with a Volmer‐Weber mode. A three‐dimensional molecular dynamics technique was applied for simulating the stress calculation during thin film growth. The results obtained from the simulation are consistent with the experimental results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Evolution of stress and structure in Cu thin films

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