Research on mechanisms of electric conduction in the p-type silicon implanted with Ne+ Ions
Artykuł w czasopiśmie
MNiSW
15
Lista A
| Status: | |
| Autorzy: | Węgierek Paweł, Billewicz Piotr |
| Rok wydania: | 2013 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 5 |
| Wolumen/Tom: | 123 |
| Strony: | 948 - 951 |
| Web of Science® Times Cited: | 8 |
| Scopus® Cytowania: | 8 |
| Bazy: | Web of Science | Scopus | WOS |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | TAK |
| Licencja: | |
| Sposób udostępnienia: | Witryna wydawcy |
| Wersja tekstu: | Ostateczna wersja opublikowana |
| Czas opublikowania: | W momencie opublikowania |
| Abstrakty: | angielski |
| The article presents the results of research on alternating-current electric conduction in boron-doped silicon (ρ = 10 Ω cm), strongly defected by the implantation of Ne+ ions (D = 1.5 × 1014 cm-2, E = 100 keV). The analysis of changes in electrical characteristics recorded at the sample annealing temperature of Ta = 373 K has been presented, concerning the influence of the testing temperature ranging from 253 K to 368 K as well as the frequency from 50 Hz to 5 MHz. The obtained results have confirmed the occurrence of two electric conduction mechanisms in strongly defected semiconductors, such as the band conduction mechanism that is characteristic of low frequency values and the jump conduction one that corresponds to higher frequencies. |
