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This research was supported by a subsidy from the Ministry of Education and Science
(Poland) for the Lublin University of Technology as funds allocated for activities in the scientific
disciplines of automation, electronics and electrical engineering (grant FD-20/EE-2/703).
This paper presents the results of AC electrical measurements of Zn-SiO2/Si nanocompos-
ites obtained by ion implantation. Implantation of Zn ions was carried out into thermally oxidized
p-type silicon substrates with energy of 150 keV and fluence of 7.5 × 1016 ion·cm−2 at a temperature
of 773 K, and is thus called implantation in “hot” conditions. The samples were annealed in ambient
air for 60 min at 973 K. Electrical measurements of Zn-SiO2/Si nanocomposites were carried out
before and after annealing. Measurements were performed in the temperature range from 20 K to
375 K. The measurement parameters were the resistance Rp, the capacitance Cp, the phase shift angle
θ and the tangent of loss angle tanδ, as a function of the frequency in the range from 50 Hz to 5 MHz.
Based on the characteristics σ(f ) and the Jonscher power law before and after sample annealing, the
values of the exponent s were calculated depending on the measurement temperature. Based on this,
the conductivity models were matched. Additionally, the real and imaginary parts of the dielectric
permittivity were determined, and on their basis, the polarization mechanisms in the tested material
were also determined.