Stress evolution during deposition of heteroepitaxial systems
Artykuł w czasopiśmie
MNiSW
15
Lista A
| Status: | |
| Autorzy: | Zientarski Tomasz, Chocyk Dariusz |
| Rok wydania: | 2013 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 9 |
| Wolumen/Tom: | 39 |
| Strony: | 710 - 715 |
| Impact Factor: | 1,119 |
| Web of Science® Times Cited: | 2 |
| Scopus® Cytowania: | 2 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Stress evolution during deposition of heteroepitaxial systems on flat and line-patterned substrates was studied by three-dimensional (3D) molecular dynamics simulation. The simulation of deposition process was carried out in a system consisting of the (001) substrate of a face-centred cubic crystal and pre-deposited atoms forming flat layers or patterned lines. Interactions between the atoms were described by the Lennard-Jones potentials. Kinematic theory of scattering was used to analyse the structures obtained from simulations. Stress evolution during the growth of thin films at different temperatures of the systems was also studied. It was found that in-plane stress is an anisotropic in heteroepitaxial systems. In the case of flat pre-deposited layers, the distribution of stress does not depend on temperature and the distribution of stress is determined by orientation of linear structures in patterned systems. |
