Computer implementation of mass transport in matlab environment for modeling epitaxial growth process with moving boundary problem
Artykuł w czasopiśmie
MNiSW
10
Lista B
| Status: | |
| Autorzy: | Gułkowski Sławomir |
| Rok wydania: | 2015 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 1 |
| Wolumen/Tom: | 19 |
| Strony: | 15 - 23 |
| Bazy: | INSPEC | BazTech |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | TAK |
| Licencja: | |
| Sposób udostępnienia: | Witryna wydawcy |
| Wersja tekstu: | Ostateczna wersja opublikowana |
| Czas opublikowania: | Po opublikowaniu |
| Abstrakty: | angielski |
| Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry. However, a lateral growth process depends on many technological parameters such as the temperature of the system, the cooling rate, the solvent or the geometry of the mask. For this reason finding optimized settings for these factors in experiment al research is difficult and time consuming. Numerical analysis of the growth process leads to better u nderstanding of the fundamentals of the growth process. For this reason a computational model of the pitaxial growth was proposed. This paper focuses on the accuracy of the numerical solution of the mass transport process during epitaxial growth. The method was implemented in the Matlab environment for the moving boundary application. The results of the calculations are presented. |
