Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses
Artykuł w czasopiśmie
MNiSW
30
Lista A
| Status: | |
| Autorzy: | Klym Halyna, Ingram Adam, Shpotyuk Oleh, Hotra Oleksandra, Popov Anatoli |
| Rok wydania: | 2016 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Wolumen/Tom: | 90 |
| Strony: | 117 - 121 |
| Impact Factor: | 1,442 |
| Web of Science® Times Cited: | 20 |
| Scopus® Cytowania: | 26 |
| Bazy: | Web of Science | Scopus | Web of Science Core Collection |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS2–20Ga2S3)100−х(СsCl)x, 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS2–20Ga2S3)100−х(СsCl)x, 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS2–20Ga2S3)85(СsCl)15 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defect-related voids. These trends are confirmed by positron-positronium decomposition algorithm. It is shown, that CsCl additives result in white shift in the visible regions in transmission spectra. The γ-irradiation of 80GeS2–20Ga2S3 base glass leads to slight long-wavelength shift of the fundamental optical absorption edge and decreasing of transmission speaks in favor of possible formation of additional defects in glasses and their darkening. |
