Structure and stress in Au/Cu two-layer system during annealing at different temperature
Artykuł w czasopiśmie
MNiSW
15
Lista A
| Status: | |
| Autorzy: | Chocyk Dariusz |
| Rok wydania: | 2016 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 4 |
| Wolumen/Tom: | 130 |
| Strony: | 1118 - 1120 |
| Web of Science® Times Cited: | 0 |
| Scopus® Cytowania: | 0 |
| Bazy: | Web of Science | Scopus | Web of Science Core Collection |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | TAK |
| Licencja: | |
| Sposób udostępnienia: | Otwarte czasopismo |
| Wersja tekstu: | Ostateczna wersja opublikowana |
| Czas opublikowania: | W momencie opublikowania |
| Abstrakty: | angielski |
| In this work, the Au/Cu two-layer systems, with the total thickness equal to 30 nm are studied. The two-layer systems were deposited by thermal evaporation in a UHV system on the silicon substrate at room temperature. After deposition the samples were annealed. We examined samples subjected to thermal cycle with the different maximum temperature. The X-ray diffraction and X-ray reflectometry are performed for systems before and after annealing. It was found that during the cycle of annealing above 150C starts process of penetration of the Au layer by Cu atoms results in alloying. In Au/Cu systems, the final layer is the ordered Au/Cu3 phase |
