Experimental studies of thin films deposition by magnetron sputtering method for CIGS solar cell fabrication
Materiały konferencyjne
MNiSW
15
WOS
| Status: | |
| Autorzy: | Gułkowski Sławomir, Krawczak Ewelina |
| Dyscypliny: | |
| Aby zobaczyć szczegóły należy się zalogować. | |
| Rok wydania: | 2017 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Wolumen/Tom: | 19 |
| Strony: | 1 - 4 |
| Web of Science® Times Cited: | 4 |
| Scopus® Cytowania: | 9 |
| Bazy: | Web of Science | Scopus | Chemical Abstracts (CAS) | DOAJ Directory of Open Access Journals |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | 2017 International Conference Energy, Environment and Material Systems |
| Skrócona nazwa konferencji: | EEMS 2017 |
| URL serii konferencji: | LINK |
| Termin konferencji: | 13 września 2017 do 15 września 2017 |
| Miasto konferencji: | Polanica-Zdrój |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | TAK |
| Licencja: | |
| Sposób udostępnienia: | Otwarte czasopismo |
| Wersja tekstu: | Ostateczna wersja opublikowana |
| Czas opublikowania: | W momencie opublikowania |
| Data opublikowania w OA: | 23 października 2017 |
| Abstrakty: | angielski |
| Among a variety of the thin film solar cell technologies of second generation, copper-indium-gallium-diselenide device (CIGS) with the latest highest lab cell efficiency record of 22.4 % seems to be the most promising for the power generation. This is partly due to the advantages of using low cost films of few microns thick not only as a metallic contacts but also as a main structure of the solar cell consisted of high quality semiconductor layers. This paper reports the experimental studies of the CIGS absorber formation on Soda Lime Glass substrate covered by thin molybdenum film as a back contact layer. All structures were deposited with the use of magnetron sputtering method only. Technological parameters of the deposition process such as deposition power, pressure and deposition time were optimized for each layer of the structure. Mo back contact was examined in terms of resistivity. EDS measurements were carried out to verify stoichiometric composition of CIGS absorber. Thin film of Al was used as a top contact in order to examine the quality of p-n junction. The I-V electrical characteristic of the p-n junction was analysed in terms of solar cell application. |
