Electrical properties of aluminum contacts deposited by DC sputtering method for photovoltaic applications
Materiały konferencyjne
MNiSW
15
WOS
| Status: | |
| Autorzy: | Krawczak Ewelina, Gułkowski Sławomir |
| Dyscypliny: | |
| Aby zobaczyć szczegóły należy się zalogować. | |
| Rok wydania: | 2017 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Wolumen/Tom: | 19 |
| Strony: | 1 - 4 |
| Web of Science® Times Cited: | 3 |
| Scopus® Cytowania: | 6 |
| Bazy: | Web of Science | Scopus | Chemical Abstracts (CAS) | DOAJ Directory of Open Access Journals |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | International Conference Energy, Environment and Material Systems (EEMS 2017) |
| Skrócona nazwa konferencji: | 2017 International Conference Energy, Environment and Material Systems |
| URL serii konferencji: | LINK |
| Termin konferencji: | 13 września 2017 do 15 września 2017 |
| Miasto konferencji: | Polanica-Zdrój |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | TAK |
| Licencja: | |
| Sposób udostępnienia: | Otwarte czasopismo |
| Wersja tekstu: | Ostateczna wersja opublikowana |
| Czas opublikowania: | W momencie opublikowania |
| Data opublikowania w OA: | 23 października 2017 |
| Abstrakty: | angielski |
| The use of aluminum contacts is common in the process of silicon solar cells production because of low contact resistivity. It has also a great importance in thin film technology for photovoltaics, especially in copper-indium-gallium-diselenide (CIGS) devices. The final stage of CIGS cell production is the top contact deposition of high conductivity layer for lateral current collection. Such material has to be highly optically transparent as well. In order to make a contact, metal is deposited onto TCO layer with minimum shadowing to allow as much light as possible into device. The metal grid contact is being made by deposition of few microns of aluminum. The resistivity of the deposited material as well as resistance between the metal grid and TCO layer plays a great role in high quality solar cell production. This paper presents the results of four point probe conductivity analysis of Al thin films deposited by direct current (DC) magnetron sputtering method. Influence of technological parameters of the Al deposition process on sheet resistance of deposited layers has been showed. In order to obtain the lowest resistivity of the thin contact layer, optimal set of sputtering parameters, i.e. power applied, deposition time and deposition pressure was found. The resistivity of the contact between two adjacent Al metal fingers deposited onto transparent conductive Al-doped zinc oxide film has been also examined. |
