The influence of annealing on the properties of ZnO:Al layers obtained by RF magnetron sputtering
Artykuł w czasopiśmie
MNiSW
20
Lista A
| Status: | |
| Autorzy: | Zdyb Agata, Krawczak Ewelina, Gułkowski Sławomir |
| Dyscypliny: | |
| Aby zobaczyć szczegóły należy się zalogować. | |
| Rok wydania: | 2018 |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Język: | angielski |
| Numer czasopisma: | 3 |
| Wolumen/Tom: | 26 |
| Strony: | 247 - 251 |
| Impact Factor: | 1,438 |
| Web of Science® Times Cited: | 11 |
| Scopus® Cytowania: | 11 |
| Bazy: | Web of Science | Scopus | Current Contents | JCR |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| Al doped ZnO has been explored as a viable alternative to indium thin oxide, which is usually used as transparent electrodes' coverage but is expensive. Homogenous and durable ZnO:Al layers on glass have been obtained in radio frequency magnetron sputtering system by adjusting optimized deposition parameters, using ZnO ceramic target with 2 wt% Al2O3. Then, after growth process, annealing treatment has been introduced in order to improve the quality of the layers. Structural, electrical and optical properties of the obtained ZnO:Al layers are presented and discussed. From the application point of view, the best results (sheet resistance of 24 Ω/sq and transparency well above 85%) were achieved after annealing in 300 °C. |
