Thin films of SiO2 ion-implanted with Sn : evaluation of structure and composition
Fragment książki (Materiały konferencyjne)
| Status: | |
| Autorzy: | Komarov Fadei F., Vlasukova Ludmila A., Milchanin Oleg, Makhavikou Maksim, Parkhomenko Irina N., Wendler E., Wesch W., Ismailova Gulziya, Opielak Marek |
| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 385 - 388 |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | NIE |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| The formation of tin nanocrystallites in a Si02 :Sn matrix using a high-dose implantation technique followed by high-temperature processing was studied. Structure and composition were studied by Rutherford backscattering spectroscopy and plan-view and cross-sectional transmission electron microscopy. It has been found that postimplantation annealing results in the β-Sn precipitation as well as the formation of SnO2 snriched regions in Si02:Sn matrix. The rest of the impurity is dissolved in the matrix of SiO2. |
