Optical transducers with frequency output
Fragment książki (Materiały konferencyjne)
MNiSW
15
WOS
| Status: | |
| Autorzy: | Osadchuk Oleksandr V., Osadchuk Volodymyr S., Osadchuk Iaroslav A., Kalimoldayev Maksat, Komada Paweł, Mussabekov Kanat |
| Dyscypliny: | |
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| Wersja dokumentu: | Drukowana | Elektroniczna |
| Arkusze wydawnicze: | 0,5 |
| Język: | angielski |
| Strony: | 581 - 590 |
| Web of Science® Times Cited: | 6 |
| Scopus® Cytowania: | 10 |
| Bazy: | Web of Science | Scopus |
| Efekt badań statutowych | NIE |
| Materiał konferencyjny: | TAK |
| Nazwa konferencji: | XL-th IEEE-SPIE Joint Symposium on Photonics, Web Engineering, Electronics for Astronomy and High Energy Physics Experiments |
| Skrócona nazwa konferencji: | XL SPIE-IEEE-PSP 2017 |
| URL serii konferencji: | LINK |
| Termin konferencji: | 28 maja 2017 do 6 czerwca 2017 |
| Miasto konferencji: | Wilga |
| Państwo konferencji: | POLSKA |
| Publikacja OA: | NIE |
| Abstrakty: | angielski |
| In this work the characteristics research of microelectronic transducers of optical radiation with a frequency output signal on the basis of a hybrid integrated circuit consisting of a bipolar and a field-effect transistor with a Schottky barrier is presented. The connection of an external inductance to electrodes a collector - drain allows to implement the auto generating device. The frequency of the device generation depends on power of optical radiation falling on photosensing elements as a photoresistor, photodiode and photosensing transistors switched on in a circuit of the self-excited oscillator. The impedance on electrodes the collector - drain of bipolar and field transistors has capacitive reactive part and negative active resistance, which compensates power losses in a tuning circuit of the device. On the base of a nonlinear equivalent circuit of the transducer on an alternating current the analytical expressions of function of transformation and equation of sensitivity are obtained. The sensitivity of optical transducers lays in a range from 25 kHz/mu Wt/cm(2) up to 150 kHz/mu Wt/cm(2). |
